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| savantic semiconductor product specification silicon npn power transistors 2SC3465 description with to-3 package high voltage fast switching speed applications for switching regulator applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1100 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 12 a p t total power dissipation t c =25 160 w t j junction temperature 200 t stg storage temperature -65~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3465 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma; r be = 6 800 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0; 1100 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0; 7 v v cesat collector-emitter saturation voltage i c =6a;i b =1.2a 2.0 v v besat base-emitter saturation voltage i c =6a;i b =1.2a 1.5 v i cbo collector cut-off current v cb =800v;i e =0 10 a i ebo emitter cut-off current v eb =7v;i c =0 10 a h fe-1 dc current gain i c =0.8a ;v ce =5v 10 40 h fe-2 dc current gain i c =4a ;v ce =5v 10 f t transition freuquency i c =0.8a ;v ce =10v 15 mhz c ob collector output capacitance i e =0 ;v cb =10v,f=1mhz 240 pf h fe-1 classifications k l m 10-20 15-30 20-40 savantic semiconductor product specification 3 silicon npn power transistors 2SC3465 package outline fig.2 outline dimensions |
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